- 专利标题: Dual gain column structure for column power area efficiency
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申请号: US18171227申请日: 2023-02-17
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公开(公告)号: US12114092B2公开(公告)日: 2024-10-08
- 发明人: Rui Wang , Hiroaki Ebihara
- 申请人: OMNIVISION TECHNOLOGIES, INC.
- 申请人地址: US CA Santa Clara
- 专利权人: OMNIVISION TECHNOLOGIES, INC.
- 当前专利权人: OMNIVISION TECHNOLOGIES, INC.
- 当前专利权人地址: US CA Snata Clara
- 代理机构: Perkins Coie LLP
- 主分类号: H04N25/78
- IPC分类号: H04N25/78 ; H04N25/77
摘要:
A pixel cell readout circuit comprises a comparator with a current mirror having first and second current paths, a first input transistor coupled to the first current path, a low conversion gain (LCG) second input transistor selectively coupled to the second current path, and a high conversion gain (HCG) second input transistor selectively coupled to the second current path. The pixel cell readout circuit further comprises a gain network coupled between a gate node of the first input transistor and a ramp generator output, wherein the gain network is configured to provide a variable comparator gain to the comparator, an LCG auto-zero switch coupled between a drain node and a gate node of the LCG second input transistor, and an HCG auto-zero switch coupled between a drain node and a gate node of the HCG second input transistor.
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