- 专利标题: Sense amplifier circuit and data read method
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申请号: US18149675申请日: 2023-01-04
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公开(公告)号: US12112824B2公开(公告)日: 2024-10-08
- 发明人: Guifen Yang , Sungsoo Chi
- 申请人: CHANGXIN MEMORY TECHNOLOGIES, INC.
- 申请人地址: CN Hefei
- 专利权人: CHANGXIN MEMORY TECHNOLOGIES, INC.
- 当前专利权人: CHANGXIN MEMORY TECHNOLOGIES, INC.
- 当前专利权人地址: CN Hefei
- 代理机构: Kilpatrick Townsend & Stockton LLP
- 优先权: CN 2111405425.7 2021.11.24
- 主分类号: G11C7/06
- IPC分类号: G11C7/06 ; G11C7/10 ; G11C7/12
摘要:
Embodiments relate to a sense amplifier circuit and a data read method. The sense amplifier circuit includes: a first P-type transistor connected to a first signal terminal; a second P-type transistor connected to a second signal terminal; a first N-type transistor connected to a third signal terminal; a second N-type transistor connected to a fourth signal terminal; a first offset cancellation subcircuit configured to connect a first read bit line to a second complementary read bit line in response to a first offset cancellation signal; a second offset cancellation subcircuit configured to connect a first complementary read bit line to a second read bit line in response to a second offset cancellation signal; a first write-back subcircuit configured to connect the first complementary read bit line to the second complementary read bit line in response to a first write-back signal; and a second write-back subcircuit.
公开/授权文献
- US20230162762A1 SENSE AMPLIFIER CIRCUIT AND DATA READ METHOD 公开/授权日:2023-05-25
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