- 专利标题： Multi-diameter magnetic random-access memory pillar structure
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申请号： US17479668申请日： 2021-09-20
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公开(公告)号： US12108685B2公开(公告)日： 2024-10-01
- 发明人: Oscar van der Straten , Koichi Motoyama , Joseph F. Maniscalco , Chih-Chao Yang
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Ryan Mason & Lewis LLP
- 代理商 L. Jeffrey Kelly
- 主分类号： H10B61/00
- IPC分类号： H10B61/00 ; H10N50/01 ; H10N50/80
摘要：
A semiconductor structure comprises a reference layer of a magnetic random-access memory pillar structure, the reference layer having a first diameter, a free layer of the magnetic random-access memory pillar structure disposed over the reference layer, the free layer having a second diameter, and an electrode layer of the magnetic random-access memory pillar structure disposed over the free layer, the electrode layer having a third diameter. At least two of the first diameter, the second diameter and the third diameter are different.
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