- 专利标题: Semiconductor device
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申请号: US17369399申请日: 2021-07-07
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公开(公告)号: US12088265B2公开(公告)日: 2024-09-10
- 发明人: Yohei Yasuda
- 申请人: Kioxia Corporation
- 申请人地址: JP Tokyo
- 专利权人: KIOXIA CORPORATION
- 当前专利权人: KIOXIA CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: Foley & Lardner LLP
- 优先权: JP 20209081 2020.12.17
- 主分类号: H03F3/45
- IPC分类号: H03F3/45
摘要:
A semiconductor device having a first differential amplification circuit is disclosed. The first differential amplification circuit includes a first input transistor having a gate configured to receive a first signal, a second input transistor having a gate configured to receive a second signal, a first current source connected to a source of the first input transistor and a source of the second input transistor, a first transistor that is connected in parallel to the source of the first input transistor and the source of the second input transistor and has a gate configured to receive the first signal, and a second transistor that is connected in series to the first transistor and has a gate configured to receive a control signal.
公开/授权文献
- US20220200552A1 SEMICONDUCTOR DEVICE 公开/授权日:2022-06-23
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