- 专利标题： Semiconductor device and method
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申请号： US18065166申请日： 2022-12-13
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公开(公告)号： US12080770B2公开(公告)日： 2024-09-03
- 发明人: Che-Cheng Chang , Chih-Han Lin , Horng-Huei Tseng
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L21/265 ; H01L21/324 ; H01L21/768 ; H01L29/417 ; H01L29/66 ; H01L29/78 ; H01L21/285
摘要：
A semiconductor device and method of manufacture are provided. A source/drain region is formed next to a spacer, which is adjacent to a gate electrode. An implantation is performed through an implantation mask into the source/drain region as well as the first spacer, forming an implantation region within the spacer.
公开/授权文献
- US20230109951A1 Semiconductor Device and Method 公开/授权日：2023-04-13
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