Invention Grant
- Patent Title: Plasma source having a dielectric plasma chamber with improved plasma resistance
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Application No.: US17237913Application Date: 2021-04-22
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Publication No.: US12075554B2Publication Date: 2024-08-27
- Inventor: Xing Chen , Ilya Pokidov , Atul Gupta
- Applicant: MKS Instruments, Inc.
- Applicant Address: US MA Andover
- Assignee: MKS Instruments, Inc.
- Current Assignee: MKS Instruments, Inc.
- Current Assignee Address: US MA Andover
- Agency: Cesari and McKenna, LLP
- Main IPC: H05H1/46
- IPC: H05H1/46 ; H01J37/32

Abstract:
A plasma chamber of a plasma processing system is provided. The plasma chamber defines a plasma channel having a first side and a second side oppositely disposed along a length of the plasma channel. The plasma chamber comprises a first section and a second section constructed from a dielectric material and an interface that bonds together the first and second sections at between a first flange of the first section and a third flange of the second section and between a second flange of the first section and a fourth flange of the second section.
Public/Granted literature
- US20210243876A1 Plasma Source Having a Dielectric Plasma Chamber with Improved Plasma Resistance Public/Granted day:2021-08-05
Information query
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