- 专利标题: Graphene transistor and method of manufacturing same
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申请号: US17403915申请日: 2021-08-17
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公开(公告)号: US12072313B2公开(公告)日: 2024-08-27
- 发明人: Naruto Miyakawa , Ayumi Shinagawa , Shota Ushiba , Masahiko Kimura , Kazuhiko Matsumoto , Takao Ono
- 申请人: Murata Manufacturing Co., Ltd. , OSAKA UNIVERSITY
- 申请人地址: JP Nagaokakyo
- 专利权人: MURATA MANUFACTURING CO., LTD.,OSAKA UNIVERSITY
- 当前专利权人: MURATA MANUFACTURING CO., LTD.,OSAKA UNIVERSITY
- 当前专利权人地址: JP Kyoto; JP Osaka
- 代理机构: Keating & Bennett, LLP
- 优先权: JP 19029080 2019.02.21
- 主分类号: H01L23/00
- IPC分类号: H01L23/00 ; G01N27/414 ; H01L29/16
摘要:
A graphene transistor includes a graphene layer including at least one sheet of graphene, a drain electrode and a source electrode each electrically connected to the graphene layer, a charge donor on at least one main surface of the graphene layer, the charge donor including an impurity charge, and a counter ion having a charge with a sign different from a sign of the impurity charge.
公开/授权文献
- US20210372966A1 GRAPHENE TRANSISTOR AND METHOD OF MANUFACTURING SAME 公开/授权日:2021-12-02
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