- 专利标题: Semiconductor device having via sidewall adhesion with encapsulant
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申请号: US18079555申请日: 2022-12-12
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公开(公告)号: US12062603B2公开(公告)日: 2024-08-13
- 发明人: Chen-Hua Yu , Yun Chen Hsieh , Hui-Jung Tsai , Hung-Jui Kuo
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Slater Matsil, LLP
- 分案原申请号: US16265291 2019.02.01
- 主分类号: H01L23/498
- IPC分类号: H01L23/498 ; H01L21/285 ; H01L21/288 ; H01L21/3213 ; H01L21/48 ; H01L21/56 ; H01L21/66 ; H01L21/683 ; H01L21/768 ; H01L21/78 ; H01L23/00 ; H01L23/31 ; H01L23/48 ; H01L23/482
摘要:
Embodiments include plating a contact feature in a first opening in a mask layer, the contact feature physically coupled to a contact pad, the contact feature partially filling the first opening. A solder cap is directly plated onto the contact feature in the first opening. The mask layer is then removed to expose an upper surface of a work piece, the contact feature vertically protruding from the work piece. After utilizing the solder cap, etching the solder cap to remove the solder cap from over the contact feature. A first encapsulant is deposited laterally around and over an upper surface of the contact feature. The first encapsulant is planarized to level an upper surface of the first encapsulant with the upper surface of the contact feature.
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