- 专利标题： Substrate processing device, manufacturing method for semiconductor device, and reaction tube
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申请号： US17166256申请日： 2021-02-03
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公开(公告)号： US12062546B2公开(公告)日： 2024-08-13
- 发明人: Hidenari Yoshida , Shigeru Odake , Tomoshi Taniyama , Takayuki Nakada
- 申请人： KOKUSAI ELECTRIC CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： KOKUSAI ELECTRIC CORPORATION
- 当前专利权人： KOKUSAI ELECTRIC CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： Volpe Koenig
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; C23C16/34 ; C23C16/455 ; H01L21/02 ; H01L21/67
摘要：
A substrate processing apparatus includes: a substrate holding member configured to hold a plurality of substrates; a reaction tube configured to accommodate the substrate holding member and process the substrates; a processing gas supply system configured to supply a processing gas into the reaction tube; and an exhaust system configured to exhaust an internal atmosphere of the reaction tube. The reaction tube includes: a cylindrical portion; a gas supply area formed outside one side wall of the cylindrical portion and connected to the processing gas supply system; and a gas exhaust area formed outside the other side wall of the cylindrical portion opposed to the gas supply area and connected to the exhaust system. Each of the gas supply area and the gas exhaust area has an inner wall which partitions the interior of each of the gas supply area and the gas exhaust area into a plurality of spaces.
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