- 专利标题： Semiconductor device with conformal source/drain layer
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申请号： US18326682申请日： 2023-05-31
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公开(公告)号： US12057495B2公开(公告)日： 2024-08-06
- 发明人: Yao-Sheng Huang , Hung-Chang Sun , I-Ming Chang , Zi-Wei Fang
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Maschoff Brennan
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L21/02 ; H01L21/311 ; H01L29/08 ; H01L29/78 ; H01L21/306
摘要：
A semiconductor device includes a semiconductor fin, a gate structure, a doped semiconductor layer, and a dielectric structure. The semiconductor fin has a top portion and a lower portion extending from the top portion to a substrate. The gate structure extends across the semiconductor fin. The doped semiconductor layer interfaces the top portion of the semiconductor fin. In a cross-section taken along a lengthwise direction of the gate structure, the doped semiconductor layer has an outer profile conformal to a profile of the top portion of the semiconductor fin.
公开/授权文献
- US20230327004A1 SEMICONDUCTOR DEVICE WITH CONFORMAL SOURCE/DRAIN LAYER 公开/授权日：2023-10-12
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