- 专利标题: Memory systems having memory devices therein with enhanced error correction capability and methods of operating same
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申请号: US18164100申请日: 2023-02-03
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公开(公告)号: US12057184B2公开(公告)日: 2024-08-06
- 发明人: Sunghye Cho , Kiheung Kim , Sungrae Kim , Junhyung Kim , Kijun Lee , Myungkyu Lee , Changyong Lee , Sanguhn Cha
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Myers Bigel, P.A.
- 主分类号: G11C29/42
- IPC分类号: G11C29/42 ; G11C11/408 ; G11C11/4091 ; G11C29/44 ; G11C29/12
摘要:
A memory system includes a memory module having a plurality of memory devices therein. A memory controller is configured to transmit commands and addresses to the memory module in synchronization with a clock, input/output data to and from the memory module in synchronization with a data transfer clock, and perform system error correction operations on data read from the memory module. The plurality of memory devices perform on-die error correction operations, which are different from each other according to a physical location of the stored read data.
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