- 专利标题: Solid-state imaging element
-
申请号: US17995745申请日: 2021-02-24
-
公开(公告)号: US12047701B2公开(公告)日: 2024-07-23
- 发明人: Luonghung Asakura , Yoshiaki Inada
- 申请人: Sony Semiconductor Solutions Corporation
- 申请人地址: JP Kanagawa
- 专利权人: Sony Semiconductor Solutions Corporation
- 当前专利权人: Sony Semiconductor Solutions Corporation
- 当前专利权人地址: JP Kanagawa
- 代理机构: Michael Best & Friedrich LLP
- 优先权: JP 20075184 2020.04.21 JP 20193108 2020.11.20
- 国际申请: PCT/JP2021/006785 2021.02.24
- 国际公布: WO2021/215105A 2021.10.28
- 进入国家日期: 2022-10-07
- 主分类号: H04N25/77
- IPC分类号: H04N25/77 ; H04N25/616 ; H04N25/65 ; H04N25/78 ; H04N25/79
摘要:
Solid-state imaging elements are disclosed. In one example, an upstream circuit sequentially generates a predetermined reset level and a signal level corresponding to an exposure amount, and causes first and second capacitive elements to hold the reset level and the signal level. A selection circuit sequentially connects one of the capacitive elements to a predetermined downstream node, disconnects both capacitive elements from the downstream node, and connects the other capacitive element to the downstream node. A downstream reset transistor initializes a level of the downstream node when both capacitive elements are disconnected from the downstream node. A downstream circuit sequentially reads the reset level and the signal level from the first and second capacitive elements via the downstream node and outputs the reset level and the signal level.
公开/授权文献
- US20230188867A1 SOLID-STATE IMAGING ELEMENT 公开/授权日:2023-06-15
信息查询