- 专利标题: Preparation method of high resistance gallium oxide based on deep learning and vertical bridgman growth method
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申请号: US17761030申请日: 2021-02-05
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公开(公告)号: US12026616B2公开(公告)日: 2024-07-02
- 发明人: Hongji Qi , Long Zhang , Duanyang Chen
- 申请人: HANGZHOU FUJIA GALLIUM TECHNOLOGY CO. LTD.
- 申请人地址: CN Zhejiang
- 专利权人: HANGZHOU FUJIA GALLIUM TECHNOLOGY CO. LTD.
- 当前专利权人: HANGZHOU FUJIA GALLIUM TECHNOLOGY CO. LTD.
- 当前专利权人地址: CN Hangzhou
- 代理机构: Maier & Maier, PLLC
- 优先权: CN 2011642207.0 2020.12.31
- 国际申请: PCT/CN2021/075563 2021.02.05
- 国际公布: WO2022/141751A 2022.07.07
- 进入国家日期: 2022-03-16
- 主分类号: C30B15/20
- IPC分类号: C30B15/20 ; G06N3/08
摘要:
The present application discloses a preparation method of high resistance gallium oxide based on deep learning and vertical Bridgman growth method. The prediction method comprises: obtaining a preparation data of the high resistance gallium oxide single crystal, the preparation data comprises a seed crystal data, an environmental data, a control data and a raw material data, and the raw material data comprises a doping type data and a doping concentration; preprocessing the preparation data to obtain a preprocessed preparation data; inputting the preprocessed preparation data into a trained neural network model, and obtaining a predicted property data corresponding to the high resistance gallium oxide single crystal through the trained neural network model, the predicted property data comprises a predicted resistivity.
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