- 专利标题： Bottom source/drain etch with fin-cut-last-VTFET
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申请号： US18314850申请日： 2023-05-10
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公开(公告)号： US12021135B2公开(公告)日： 2024-06-25
- 发明人: Tao Li , Indira Seshadri , Nelson Felix , Eric Miller
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： CANTOR COLBURN LLP
- 代理商 Joseph P. Curcuru
- 分案原申请号： US17518649 2021.11.04
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L21/8238 ; H01L27/092 ; H01L29/06 ; H01L29/08 ; H01L29/78
摘要：
A technique relates to a semiconductor device. A first epitaxial material is formed under a bottom surface of a set of fins, the first epitaxial material being under fin channel regions of the set of fins. A second epitaxial material is formed adjacent to the first epitaxial material and remote from the fin channel regions, a combination of the first epitaxial material and the second epitaxial material forming a bottom source or drain (source/drain) layer. A top source/drain layer is formed on an upper portion of the set of fins, gate material being disposed around the set of fins between the top source/drain layer and the bottom source/drain layer.
公开/授权文献
- US20230275141A1 BOTTOM SOURCE/DRAIN ETCH WITH FIN-CUT-LAST-VTFET 公开/授权日：2023-08-31
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