- 专利标题: Low capacitance transient voltage suppressor with a mos-triggered silicon controlled rectifier as high-side steering diode
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申请号: US18305326申请日: 2023-04-22
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公开(公告)号: US12021075B2公开(公告)日: 2024-06-25
- 发明人: Shekar Mallikarjunaswamy
- 申请人: Alpha and Omega Semiconductor (Cayman) Ltd.
- 申请人地址: KY Grand Cayman
- 专利权人: Alpha and Omega Semiconductor (Cayman) Ltd.
- 当前专利权人: Alpha and Omega Semiconductor (Cayman) Ltd.
- 当前专利权人地址: KY Grand Cayman
- 主分类号: H01L27/02
- IPC分类号: H01L27/02 ; H01L27/08 ; H01L29/66 ; H01L29/861
摘要:
A transient voltage suppressor (TVS) device includes a MOS-triggered silicon controlled rectifier (SCR) as the high-side steering diode and a silicon controlled rectifier (SCR) for the low-side steering diode. In one embodiment, the MOS-triggered SCR includes alternating p-type and n-type regions and a diode-connected MOS transistor integrated therein to trigger the silicon controlled rectifier to turn on. In one embodiment, the SCR of the low-side steering diode includes alternating p-type and n-type regions where the p-type region adjacent the n-type region forming the cathode terminal is not biased to any electrical potential.
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