- 专利标题: Methods for forming self-aligned interconnect structures
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申请号: US17705487申请日: 2022-03-28
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公开(公告)号: US12020984B2公开(公告)日: 2024-06-25
- 发明人: Ru-Gun Liu , Shih-Ming Chang , Hoi-Tou Ng
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Haynes and Boone, LLP
- 主分类号: H01L21/768
- IPC分类号: H01L21/768 ; H01L21/027 ; H01L21/311 ; H01L23/522
摘要:
The present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate, a first conductive feature embedded in a top portion of the substrate, a dielectric layer over the substrate, and a second conductive feature surrounded by the dielectric layer and in contact with the first conductive feature. The first conductive feature includes a metal layer and a reflective layer on the metal layer. The reflective layer has a reflectivity higher than the metal layer.
公开/授权文献
- US20220223474A1 Methods for Forming Self-Aligned Interconnect Structures 公开/授权日:2022-07-14
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