- 专利标题: Optimizing plasma resources for targeted film
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申请号: US17075869申请日: 2020-10-21
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公开(公告)号: US12020914B2公开(公告)日: 2024-06-25
- 发明人: Shota Yamazaki , Yuichi Takenaga
- 申请人: Tokyo Electron Limited
- 申请人地址: JP Tokyo
- 专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人地址: JP Tokyo
- 代理机构: Venjuris, P.C.
- 优先权: JP 19200139 2019.11.01
- 主分类号: H01J37/32
- IPC分类号: H01J37/32 ; C23C16/455 ; C23C16/52 ; G05B19/41 ; G05B19/4155 ; H01L21/67
摘要:
An information processing device includes a storage configured to store a first film thickness model or a first refractive index model defining an amount of change in a film thickness or a refractive index at each position of a first wafer when a film forming processing is performed by changing an output of each of a plurality of plasma sources provided in a film forming device by a predetermined amount and a calculator configured to calculate, based on the first film thickness model or the first refractive index model, a correction value of the output of each of the plurality of plasma sources to achieve a target value of a film thickness or a target value of a refractive index at each position of a second wafer.
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