- 专利标题： Method of using high density plasma chemical vapor deposition chamber
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申请号： US17740296申请日： 2022-05-09
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公开(公告)号： US12020905B2公开(公告)日： 2024-06-25
- 发明人: Wei-Ching Wu , Ding-I Liu , Wen-Long Lee
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Hauptman Ham, LLP
- 分案原申请号： US17141974 2021.01.05
- 主分类号： C23C16/52
- IPC分类号： C23C16/52 ; C23C16/455 ; H01J37/32
摘要：
A method of making a semiconductor device includes comparing a thickness profile of a surface of a wafer with a reference value using a control unit. The method further includes transmitting a control signal to an adjustable nozzle based on the comparison of the thickness profile and the reference value. The method further includes rotating the adjustable nozzle about a longitudinal axis of the adjustable nozzle in response to the control signal.
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