- 专利标题: Quantum dot device, method of manufacturing the same, and electronic device
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申请号: US17171008申请日: 2021-02-09
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公开(公告)号: US12016241B2公开(公告)日: 2024-06-18
- 发明人: Won Sik Yoon , Moon Gyu Han , Kwanghee Kim , Heejae Lee , Eun Joo Jang , Tae Hyung Kim , Hyo Sook Jang
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Gyeonggi-Do
- 代理机构: CANTOR COLBURN LLP
- 优先权: KR 20200017693 2020.02.13 KR 20210017710 2021.02.08
- 主分类号: H10K85/00
- IPC分类号: H10K85/00 ; B82Y20/00 ; B82Y30/00 ; B82Y40/00 ; H10K50/11 ; H10K50/115 ; H10K50/16 ; H10K50/17 ; H10K71/00 ; H10K101/40 ; H10K102/00
摘要:
A quantum dot device including a first electrode and a second electrode each having a surface opposite the other, a quantum dot layer disposed between the first electrode and the second electrode, an electron transport layer disposed between the quantum dot layer and the second electrode and including first inorganic nanoparticles and a first organic material, and an electron injection layer disposed between the electron transport layer and the second electrode and including second inorganic nanoparticles and a second organic material, wherein a ratio by weight of an amount of the second organic material to a total amount of the second inorganic nanoparticles and the second organic material in the electron injection layer is less than a ratio by weight of an amount of the first organic material to a total amount of the first inorganic nanoparticles and the first organic material in the electron transport layer. An electronic device including the quantum dot device.
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