- 专利标题: Ring structure for film resistor
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申请号: US17579129申请日: 2022-01-19
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公开(公告)号: US12015049B2公开(公告)日: 2024-06-18
- 发明人: Chun-Tsung Kuo , Jiech-Fun Lu
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Eschweiler & Potashnik, LLC
- 分案原申请号: US16789839 2020.02.13
- 主分类号: H01L21/768
- IPC分类号: H01L21/768 ; H01L49/02
摘要:
Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. The method includes depositing a resistive layer over a substrate. A conductive structure is formed over the resistive layer. A first etch process is performed on the resistive layer to define a resistor segment of the resistive layer and a peripheral region of the resistive layer. The resistor segment is laterally separated from the peripheral region of the resistive layer. The peripheral region continuously laterally wraps around an outer perimeter of the resistor segment.
公开/授权文献
- US20220149147A1 RING STRUCTURE FOR FILM RESISTOR 公开/授权日:2022-05-12
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