- 专利标题: Die stacking structure and method forming same
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申请号: US17814766申请日: 2022-07-25
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公开(公告)号: US12002799B2公开(公告)日: 2024-06-04
- 发明人: Chen-Hua Yu , Hung-Yi Kuo , Chung-Shi Liu , Hao-Yi Tsai , Cheng-Chieh Hsieh , Tsung-Yuan Yu , Ming Hung Tseng
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Slater Matsil, LLP
- 分案原申请号: US16925032 2020.07.09
- 主分类号: H01L23/498
- IPC分类号: H01L23/498 ; H01L21/56 ; H01L21/66 ; H01L21/768 ; H01L23/00 ; H01L25/00 ; H01L25/065 ; H01L25/18
摘要:
A method includes bonding a first device die to a second device die, encapsulating the first device die in a first encapsulant, performing a backside grinding process on the second device die to reveal through-vias in the second device die, and forming first electrical connectors on the second device die to form a package. The package includes the first device die and the second device die. The method further includes encapsulating the first package in a second encapsulant, and forming an interconnect structure overlapping the first package and the second encapsulant. The interconnect structure comprises second electrical connectors.
公开/授权文献
- US20220359488A1 Die Stacking Structure and Method Forming Same 公开/授权日:2022-11-10
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