- 专利标题： Metal oxide film and method for forming metal oxide film
-
申请号： US18137032申请日： 2023-04-20
-
公开(公告)号： US11978742B2公开(公告)日： 2024-05-07
- 发明人: Masahiro Takahashi , Takuya Hirohashi , Masashi Tsubuku , Noritaka Ishihara , Masashi Oota
- 申请人： Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址： JP Atsugi
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi
- 代理机构： Fish & Richardson P.C.
- 优先权： JP 12245992 2012.11.08 JP 13016242 2013.01.30 JP 13056768 2013.03.19
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; C23C14/08 ; G01N23/207 ; G02F1/1368 ; H01L21/66 ; H01L29/04 ; H01L29/24 ; H01L29/66 ; H01L29/786 ; H01L21/02
摘要：
A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.
公开/授权文献
- US20230369341A1 METAL OXIDE FILM AND METHOD FOR FORMING METAL OXIDE FILM 公开/授权日：2023-11-16
信息查询
IPC分类:
