- 专利标题： Interconnection structure with anti-adhesion layer
-
申请号： US17230701申请日： 2021-04-14
-
公开(公告)号： US11948835B2公开(公告)日： 2024-04-02
- 发明人: Che-Cheng Chang , Chih-Han Lin
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Maschoff Brennan
- 分案原申请号： US14984568 2015.12.30
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/485 ; H01L23/528
摘要：
A device comprises a first metal structure, a dielectric structure, a dielectric residue, and a second metal structure. The dielectric structure is over the first metal structure. The dielectric structure has a stepped sidewall structure. The stepped sidewall structure comprises a lower sidewall and an upper sidewall laterally set back from the lower sidewall. The dielectric residue is embedded in a recessed region in the lower sidewall of the stepped sidewall structure of the dielectric structure. The second metal structure extends through the dielectric structure to the first metal structure.
公开/授权文献
- US20210233806A1 INTERCONNECTION STRUCTURE WITH ANTI-ADHESION LAYER 公开/授权日：2021-07-29
信息查询
IPC分类:
