- 专利标题: Multi-element ferroelectric gain memory bit-cell having stacked and folded planar capacitors
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申请号: US17654526申请日: 2022-03-11
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公开(公告)号: US11903219B1公开(公告)日: 2024-02-13
- 发明人: Rajeev Kumar Dokania , Amrita Mathuriya , Debo Olaosebikan , Tanay Gosavi , Noriyuki Sato , Sasikanth Manipatruni
- 申请人: Kepler Computing Inc.
- 申请人地址: US CA San Francisco
- 专利权人: KEPLER COMPUTING INC.
- 当前专利权人: KEPLER COMPUTING INC.
- 当前专利权人地址: US CA San Francisco
- 代理机构: MUGHAL GAUDRY & FRANKLIN PC
- 主分类号: H10B53/30
- IPC分类号: H10B53/30
摘要:
A configuration for efficiently placing a group of capacitors with one terminal connected to a common node is described. The capacitors are stacked and folded along the common node. In a stack and fold configuration, devices are stacked vertically (directly or with a horizontal offset) with one terminal of the devices being shared to a common node, and further the capacitors are placed along both sides of the common node. The common node is a point of fold. In one example, the devices are capacitors. N number of capacitors can be divided in L number of stack layers such that there are N/L capacitors in each stacked layer. The N/L capacitors are shorted together with an electrode (e.g., bottom electrode). The electrode can be metal, a conducting oxide, or a combination of a conducting oxide and a barrier material. The capacitors can be planar, non-planar or replaced by memory elements.
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