- 专利标题： Semiconductor device and method of forming the same
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申请号： US17869003申请日： 2022-07-20
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公开(公告)号： US11901255B2公开(公告)日： 2024-02-13
- 发明人: Chih-Chien Pan , Chin-Fu Kao , Li-Hui Cheng , Szu-Wei Lu
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 分案原申请号： US16176725 2018.10.31
- 主分类号： H01L23/31
- IPC分类号： H01L23/31 ; H01L25/065 ; H01L23/498 ; H01L21/48 ; H01L21/56 ; H01L21/768 ; H01L23/00
摘要：
A method of forming a semiconductor device includes attaching a first semiconductor device to a first surface of a substrate; forming a sacrificial structure on the first surface of the substrate around the first semiconductor device, the sacrificial structure encircling a first region of the first surface of the substrate; and forming an underfill material in the first region.
公开/授权文献
- US20220359331A1 Semiconductor Device and Method of Forming the Same 公开/授权日：2022-11-10
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