- 专利标题: High performance high voltage isolators
-
申请号: US16916748申请日: 2020-06-30
-
公开(公告)号: US11881449B2公开(公告)日: 2024-01-23
- 发明人: Jeffrey Alan West , Thomas Dyer Bonifield
- 申请人: Texas Instruments Incorporated
- 申请人地址: US TX Dallas
- 专利权人: Texas Instruments Incorporated
- 当前专利权人: Texas Instruments Incorporated
- 当前专利权人地址: US TX Dallas
- 代理商 Andrew R. Ralston; Frank D. Cimino
- 主分类号: H01L23/522
- IPC分类号: H01L23/522 ; H01L23/58 ; H01L23/64 ; H01L27/01
摘要:
An integrated circuit includes a semiconductor substrate and a plurality of dielectric layers over the semiconductor substrate, including a top dielectric layer. A metal plate or metal coil is located over the top dielectric layer; a metal ring is located over the top dielectric layer and substantially surrounds the metal plate or metal coil. A protective overcoat overlies the metal ring and overlies the metal plate or metal coil. A trench opening is formed through the protective overcoat, with the trench opening exposing the top dielectric layer between the metal plate/coil and the metal ring, the trench opening substantially surrounding the metal plate or metal coil.
公开/授权文献
- US20210020564A1 HIGH PERFORMANCE HIGH VOLTAGE ISOLATORS 公开/授权日:2021-01-21
信息查询
IPC分类: