- 专利标题: Multilayer capacitor and substrate including the same mounted thereon
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申请号: US17681012申请日: 2022-02-25
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公开(公告)号: US11875948B2公开(公告)日: 2024-01-16
- 发明人: Hwi Dae Kim , Sang Soo Park , Chan Yoon , Woo Chul Shin , Ji Hong Jo
- 申请人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Morgan, Lewis & Bockius LLP
- 优先权: KR 20190089773 2019.07.24
- 主分类号: H01G4/30
- IPC分类号: H01G4/30 ; H01G2/02 ; H01G4/12 ; H01G4/012
摘要:
A multilayer capacitor includes a capacitor body having an active region, upper and lower cover regions, and width margins on opposing sides of the active region. The width margin includes a first region on an internal side thereof adjacent the first and second internal electrodes and a second region on an external side between the first region and a respective external surface of the capacitor body, and he upper and lower cover regions each include a third region on an internal side thereof adjacent the internal electrodes and a fourth region on an external side between the third region and a respective external surface of the capacitor body. The active region, the second region, and the fourth region have a same dielectric constant A, and the first and third regions have a same dielectric constant B, and A and B are different from each other and satisfy 0.5≤B/A.
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