- 专利标题: Electrostatic discharge protection circuit
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申请号: US17664910申请日: 2022-05-25
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公开(公告)号: US11862965B2公开(公告)日: 2024-01-02
- 发明人: Qi'an Xu
- 申请人: CHANGXIN MEMORY TECHNOLOGIES, INC.
- 申请人地址: CN Hefei
- 专利权人: CHANGXIN MEMORY TECHNOLOGIES, INC.
- 当前专利权人: CHANGXIN MEMORY TECHNOLOGIES, INC.
- 当前专利权人地址: CN Hefei
- 代理机构: Cooper Legal Group, LLC
- 优先权: CN 2210224399.6 2022.03.07
- 主分类号: H02H9/02
- IPC分类号: H02H9/02 ; H02H9/00
摘要:
The present disclosure provides an electrostatic discharge protection circuit, a chip including a first pad and a second pad. The electrostatic discharge protection circuit includes a trigger unit and a discharge transistor. The trigger unit is connected between the first pad and the second pad, provided with a trigger terminal, and configured to generate a trigger signal when there is an electrostatic pulse on the first pad. The first pad is connected to a first voltage, the second pad is connected to a second voltage, and the first voltage is greater than the second voltage. The discharge transistor has a first terminal connected to the first pad, and a second terminal connected to the second pad, and discharges an electrostatic charge to the second pad when triggered by the trigger signal.
公开/授权文献
- US20230283068A1 ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT 公开/授权日:2023-09-07
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