- 专利标题： Integrated circuit memory and manufacturing method thereof, and semiconductor integrated circuit device
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申请号： US17389898申请日： 2021-07-30
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公开(公告)号： US11862723B2公开(公告)日： 2024-01-02
- 发明人: Qu Luo
- 申请人： CHANGXIN MEMORY TECHNOLOGIES, INC.
- 申请人地址： CN Hefei
- 专利权人： CHANGXIN MEMORY TECHNOLOGIES, INC.
- 当前专利权人： CHANGXIN MEMORY TECHNOLOGIES, INC.
- 当前专利权人地址： CN Hefei
- 代理机构： Syncoda LLC
- 代理商 Feng Ma
- 优先权： CN 2010842887.4 2020.08.20
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66 ; H10B12/00
摘要：
A manufacturing method of an integrated circuit memory includes: a substrate is provided; a bit line extending along a first direction is formed on the substrate; a word line extending along a second direction is formed on the bit line; and a vertical storage transistor is formed in an overlapping region where the word line and the bit line are spatially intersected, the vertical storage transistor being located on the bit line, and connected to the bit line.
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