发明授权
- 专利标题: Semiconductor device including source/drain contact having height below gate stack
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申请号: US18167651申请日: 2023-02-10
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公开(公告)号: US11862623B2公开(公告)日: 2024-01-02
- 发明人: Charles Chew-Yuen Young , Chih-Liang Chen , Chih-Ming Lai , Jiann-Tyng Tzeng , Shun-Li Chen , Kam-Tou Sio , Shih-Wei Peng , Chun-Kuang Chen , Ru-Gun Liu
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Maschoff Brennan
- 分案原申请号: US17092100 2020.11.06
- 主分类号: H01L27/02
- IPC分类号: H01L27/02 ; H01L21/768 ; H01L21/8234 ; H01L23/485 ; G06F30/394 ; H01L23/528 ; H01L29/66 ; H01L21/84
摘要:
A method is provided, including the following operations: arranging a first gate structure extending continuously above a first active region and a second active region of a substrate; arranging a first separation spacer disposed on the first gate structure to isolate an electronic signal transmitted through a first gate via and a second gate via that are disposed on the first gate structure, wherein the first gate via and the second gate via are arranged above the first active region and the second active region respectively; and arranging a first local interconnect between the first active region and the second active region, wherein the first local interconnect is electrically coupled to a first contact disposed on the first active region and a second contact disposed on the second active region.
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