- 专利标题： Contact isolation in semiconductor devices
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申请号： US17006642申请日： 2020-08-28
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公开(公告)号： US11862452B2公开(公告)日： 2024-01-02
- 发明人: Boon Teik Chan , Waikin Li , Zheng Tao
- 申请人： IMEC VZW
- 申请人地址： BE Leuven
- 专利权人： IMEC VZW
- 当前专利权人： IMEC VZW
- 当前专利权人地址： BE Leuven
- 代理机构： McDonnell Boehnen Hulbert & Berghoff LLP
- 优先权： EP 194719 2019.08.30
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L27/092 ; H01L21/8238 ; H01L29/06 ; H01L21/02 ; H01L29/775 ; H01L21/822 ; H01L29/10 ; H01L21/768
摘要：
In a first aspect, the present disclosure relates to a method for forming a contact isolation for a semiconductor device, comprising: providing a semiconductor structure comprising a trench exposing a contact thereunder, filling a bottom of the trench with a sacrificial material, infiltrating the sacrificial material with a ceramic material, and removing the sacrificial material.
公开/授权文献
- US20210066116A1 Contact Isolation in Semiconductor Devices 公开/授权日：2021-03-04
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