- 专利标题： Method and device for determining repaired line and repairing line in memory, storage medium, and electronic device
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申请号： US17651446申请日： 2022-02-17
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公开(公告)号： US11862279B2公开(公告)日： 2024-01-02
- 发明人: Bo Yang , Xiaodong Luo
- 申请人： CHANGXIN MEMORY TECHNOLOGIES, INC.
- 申请人地址： CN Hefei
- 专利权人： CHANGXIN MEMORY TECHNOLOGIES, INC.
- 当前专利权人： CHANGXIN MEMORY TECHNOLOGIES, INC.
- 当前专利权人地址： CN Hefei
- 代理机构： Syncoda LLC
- 代理商 Feng Ma
- 优先权： CN 2110824854.1 2021.07.21
- 主分类号： G11C29/00
- IPC分类号： G11C29/00 ; G11C7/10 ; G11C29/44 ; G11C29/46
摘要：
A method for determining a repaired line and a repairing line in a memory includes the following: writing first preset data sets into respective lines in a normal region, and writing second preset data sets into respective lines in a redundancy region; repairing the lines in the normal region by using the lines in the redundancy region; reading data from the lines in the normal region after repairing; and determining a repaired line in the normal region and a repairing line in the redundancy region according to the data of the lines in the normal region, the data of the lines in the normal region after repairing, or the data of the lines in the redundancy region.
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