- 专利标题: Integrated circuit with biofets and fabrication thereof
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申请号: US17007973申请日: 2020-08-31
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公开(公告)号: US11860120B2公开(公告)日: 2024-01-02
- 发明人: Tung-Tsun Chen , Yi-Hsing Hsiao , Jui-Cheng Huang , Yu-Jie Huang
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Maschoff Brennan
- 主分类号: G01N27/414
- IPC分类号: G01N27/414 ; G01N33/569 ; H01L21/762
摘要:
An IC includes a source region and a drain region in a semiconductor layer. A channel region is between the source region and the drain region. A sensing well is on a back surface of the semiconductor layer and over the channel region. An interconnect structure is on a front surface of the semiconductor layer opposite the back surface of the semiconductor layer. A biosensing film lines the sensing well and contacts a bottom surface of the sensing well that is defined by the semiconductor layer. A coating of selective binding agent is over the biosensing film and configured to bind with a cardiac cell.
公开/授权文献
- US20220065812A1 INTEGRATED CIRCUIT WITH BIOFETS AND FABRICATION THEREOF 公开/授权日:2022-03-03
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