Invention Grant
- Patent Title: Semiconductor device and manufacturing method of the same
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Application No.: US17215493Application Date: 2021-03-29
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Publication No.: US11854877B2Publication Date: 2023-12-26
- Inventor: Jing-Cheng Lin , Ying-Ching Shih , Pu Wang , Chen-Hua Yu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT LAW
- Agent Anthony King
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/56 ; H01L21/683 ; H01L25/065 ; H01L23/00 ; H01L25/10 ; H01L23/31 ; H01L23/48 ; H01L25/00

Abstract:
Some embodiments of the present disclosure provide a semiconductor device. The semiconductor device includes: a bottom package; wherein an area of a contact surface between the conductor and the through via substantially equals a cross-sectional area of the through via, and the bottom package includes: a molding compound; a through via penetrating through the molding compound; a die molded in the molding compound; and a conductor on the through via. An associated method of manufacturing the semiconductor device is also disclosed.
Public/Granted literature
- US20210217736A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2021-07-15
Information query
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