- 专利标题： Semiconductor device and manufacturing method of the same
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申请号： US17215493申请日： 2021-03-29
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公开(公告)号： US11854877B2公开(公告)日： 2023-12-26
- 发明人: Jing-Cheng Lin , Ying-Ching Shih , Pu Wang , Chen-Hua Yu
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： WPAT LAW
- 代理商 Anthony King
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/56 ; H01L21/683 ; H01L25/065 ; H01L23/00 ; H01L25/10 ; H01L23/31 ; H01L23/48 ; H01L25/00
摘要：
Some embodiments of the present disclosure provide a semiconductor device. The semiconductor device includes: a bottom package; wherein an area of a contact surface between the conductor and the through via substantially equals a cross-sectional area of the through via, and the bottom package includes: a molding compound; a through via penetrating through the molding compound; a die molded in the molding compound; and a conductor on the through via. An associated method of manufacturing the semiconductor device is also disclosed.
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