Invention Grant
- Patent Title: Surface acoustic wave device fabrication method
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Application No.: US17137051Application Date: 2020-12-29
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Publication No.: US11848660B2Publication Date: 2023-12-19
- Inventor: Chen-Hsiao Wang , Kai-Kuang Ho
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. PATENTS
- Priority: CN 2011328874.1 2020.11.24
- Main IPC: H03H9/10
- IPC: H03H9/10 ; H03H3/08 ; H03H9/25 ; H03H9/02 ; H10N30/02 ; H10N30/88

Abstract:
A surface acoustic wave (SAW) device including a substrate is provided. Multiple surface acoustic wave elements are disposed on the substrate. A conductive surrounding structure includes: a wall part, disposed on the substrate and surrounding the surface acoustic wave elements; and a lateral layer part, disposed on the wall part. The lateral layer part has an opening above the surface acoustic wave elements. A cap layer covers the lateral layer part and closes the opening.
Public/Granted literature
- US20220166402A1 STRUCTURE OF SURFACE ACOUSTIC WAVE DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2022-05-26
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