Invention Grant
- Patent Title: Lead between a plurality of encapsulated MOSFETs
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Application No.: US17290087Application Date: 2019-11-14
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Publication No.: US11830792B2Publication Date: 2023-11-28
- Inventor: Kentaro Nasu
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JP 18216458 2018.11.19
- International Application: PCT/JP2019/044711 2019.11.14
- International Announcement: WO2020/105542A 2020.05.28
- Date entered country: 2021-04-29
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/31 ; H01L23/00 ; H01L25/07
![Lead between a plurality of encapsulated MOSFETs](/abs-image/US/2023/11/28/US11830792B2/abs.jpg.150x150.jpg)
Abstract:
The semiconductor device includes first and second semiconductor elements. Each element has an obverse surface and a reverse surface, with a first electrode arranged on the reverse surface, and with a second electrode arranged on the obverse surface. The semiconductor device further includes: a first lead having an obverse surface and a reverse surface; an insulating layer covering the first lead, the first semiconductor element and the second semiconductor element; a first electrode connected to the second electrode of the first semiconductor element; and a second electrode connected to the first lead. The first semiconductor element and the first lead are bonded to each other with the reverse surface of the first semiconductor element facing the lead obverse surface. The second semiconductor element and the first lead are bonded to each other with the reverse surface of the second semiconductor element facing the lead reverse surface.
Public/Granted literature
- US20210398884A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-12-23
Information query
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