Invention Grant
- Patent Title: Semiconductor package with redistribution substrate having embedded passive device
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Application No.: US17359110Application Date: 2021-06-25
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Publication No.: US11810915B2Publication Date: 2023-11-07
- Inventor: Kyoung Lim Suk , Seokhyun Lee , Jaegwon Jang
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR 20200153634 2020.11.17
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/522 ; H01L23/00 ; H01L23/31 ; H01L23/495 ; H01L23/528 ; H01L23/532 ; H01L27/08 ; H01L23/538 ; H01L49/02

Abstract:
Disclosed is a semiconductor package including: a redistribution substrate; at least one passive device in the redistribution substrate, the passive device including a first terminal and a second terminal; and a semiconductor chip on a top surface of the redistribution substrate, the semiconductor chip vertically overlapping at least a portion of the passive device, wherein the redistribution substrate includes: a dielectric layer in contact with a first lateral surface, a second lateral surface opposite to the first lateral surface, and a bottom surface of the passive device; a lower conductive pattern on the first terminal; a lower seed pattern provided between the first terminal and the conductive pattern, and directly connected to the first terminal; a first upper conductive pattern on the second terminal and a first upper seed pattern provided between the second terminal and the first upper conductive pattern, and directly connected to the second terminal.
Public/Granted literature
- US20220157810A1 SEMICONDUCTOR PACKAGE WITH REDISTRIBUTION SUBSTRATE Public/Granted day:2022-05-19
Information query
IPC分类: