Invention Grant
- Patent Title: Superlattice photodetector thinned with improved performance and method of manufacturing the same
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Application No.: US17454404Application Date: 2021-11-10
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Publication No.: US11804562B2Publication Date: 2023-10-31
- Inventor: Sanghyeon Kim , DaeMyeong Geum , SeungYeop Ahn , Jinha Lim
- Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
- Applicant Address: KR Daejeon
- Assignee: Korea Advanced Institute Of Science and Technology
- Current Assignee: Korea Advanced Institute Of Science and Technology
- Current Assignee Address: KR Daejeon
- Agency: Nixon Peabody LLP
- Priority: KR 20200151149 2020.11.12
- Main IPC: H01L31/0352
- IPC: H01L31/0352 ; H01L31/0232 ; H01L31/18 ; H01L49/02 ; H01L27/144

Abstract:
Various embodiments relate to a superlattice photodetector and a method of manufacturing the same. The superlattice photodetector includes an absorption layer for absorbing incident light and a waveguide layer coupled with the absorption layer and enabling the incident light to be waveguided within the absorption layer. The waveguide layer may include a periodic structure in which a plurality of metal patterns and a plurality of dielectric patterns are repeatedly arranged. According to various embodiments, the superlattice photodetector can be thinned while having improved performance.
Public/Granted literature
- US20220149217A1 SUPERLATTICE PHOTODETECTOR THINNED WITH IMPROVED PERFORMANCE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2022-05-12
Information query
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