- 专利标题： FeRAM MFM structure with selective electrode etch
-
申请号： US17574010申请日： 2022-01-12
-
公开(公告)号： US11785777B2公开(公告)日： 2023-10-10
- 发明人: Chih-Hsiang Chang , Kuo-Chi Tu , Sheng-Hung Shih , Wen-Ting Chu , Tzu-Yu Chen , Fu-Chen Chang
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Eschweiler & Potashnik, LLC
- 分案原申请号： US16394207 2019.04.25
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H10B51/00 ; G11C11/22 ; H01L29/78 ; H01L29/51 ; H01L29/66 ; H01L21/28
摘要：
In some embodiments, the present disclosure relates to a method of forming an integrated chip including forming a ferroelectric layer over a bottom electrode layer, forming a top electrode layer over the ferroelectric layer, performing a first removal process to remove peripheral portions of the bottom electrode layer, the ferroelectric layer, and the top electrode layer, and performing a second removal process using a second etch that is selective to the bottom electrode layer and the top electrode layer to remove portions of the bottom electrode layer and the top electrode layer, so that after the second removal process the ferroelectric layer has a surface that protrudes past a surface of the bottom electrode layer and the top electrode layer.
公开/授权文献
- US20220139959A1 FeRAM MFM STRUCTURE WITH SELECTIVE ELECTRODE ETCH 公开/授权日：2022-05-05
信息查询
IPC分类:
