- 专利标题: Logic circuit and semiconductor device formed using unipolar transistor
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申请号: US17441804申请日: 2020-03-12
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公开(公告)号: US11777502B2公开(公告)日: 2023-10-03
- 发明人: Hiroki Inoue , Munehiro Kozuma , Takeshi Aoki , Shuji Fukai , Fumika Akasawa , Sho Nagao
- 申请人: Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址: JP Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Kanagawa-ken
- 代理机构: Husch Blackwell LLP
- 优先权: JP 19066785 2019.03.29
- 国际申请: PCT/IB2020/052186 2020.03.12
- 国际公布: WO2020/201860A 2020.10.08
- 进入国家日期: 2021-09-22
- 主分类号: H03K19/08
- IPC分类号: H03K19/08 ; H03K17/56 ; H01L27/12 ; H01L27/13
摘要:
A semiconductor device is provided; the semiconductor device includes unipolar transistors. A steady-state current does not flow in the semiconductor device. The semiconductor device uses a high-level potential and a low-level potential to express a high level and a low level, respectively. The semiconductor device includes unipolar transistors, a capacitor, first and second input terminals, and an output terminal. To the second input terminal, a signal is input whose logic is inverted from the logic of a signal input to the first input terminal. The semiconductor device has a circuit structure called bootstrap in which two unipolar transistors are connected in series between the high-level potential and the low-level potential and a capacitor is provided between an output terminal and a gate of one of the two transistors. A delay is caused between the gate of the transistor and the signal output from the output terminal, whereby the bootstrap can be certainly performed.
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