- 专利标题： Methods for depositing a hafnium lanthanum oxide film on a substrate by a cyclical deposition process in a reaction chamber
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申请号： US17577073申请日： 2022-01-17
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公开(公告)号： US11769664B2公开(公告)日： 2023-09-26
- 发明人: Tatiana Ivanova , Perttu Sippola , Michael Eugene Givens
- 申请人： ASM IP Holding B.V.
- 申请人地址： NL Almere
- 专利权人： ASM IP Holding B.V.
- 当前专利权人： ASM IP Holding B.V.
- 当前专利权人地址： NL Almere
- 代理机构： Laine IP Oy
- 代理商 Mark W. Scott
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L29/51 ; H01L21/28
摘要：
A method for depositing a hafnium lanthanum oxide film on a substrate by a cyclical deposition in a reaction chamber is disclosed. The method may include: depositing a hafnium oxide film on the substrate utilizing a first sub-cycle of the cyclical deposition process and depositing a lanthanum oxide film utilizing a second sub-cycle of the cyclical deposition process.
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