发明授权
- 专利标题: Semiconductor package for high-speed data transmission and manufacturing method thereof
-
申请号: US17809903申请日: 2022-06-30
-
公开(公告)号: US11764173B2公开(公告)日: 2023-09-19
- 发明人: Huan-Neng Chen , Wen-Shiang Liao
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: WPAT LAW
- 代理商 Anthony King
- 分案原申请号: US16818826 2020.03.13
- 主分类号: H01L23/66
- IPC分类号: H01L23/66 ; H01L21/48 ; H01L23/538 ; H01P3/12 ; H01L23/498 ; H01L23/00 ; H01L25/00 ; H01L25/18
摘要:
A semiconductor structure includes: a substrate; a first dielectric layer over the substrate; a waveguide over the first dielectric layer; a second dielectric layer over the first dielectric layer and laterally surrounding the waveguide; a first conductive member and a second conductive member over the second dielectric layer and the waveguide, the first conductive member and the second conductive member being in contact with the waveguide; a conductive bump on one side of the substrate and electrically connected to the first conductive member or the second conductive member; and a conductive via extending through the substrate and electrically connecting the conductive bump to the first conductive member or the second conductive member. The waveguide is configured to transmit an electromagnetic signal between the first conductive member and the second conductive member.
公开/授权文献
信息查询
IPC分类: