- 专利标题： Semiconductor device and method of manufacturing semiconductor device
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申请号： US17944853申请日： 2022-09-14
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公开(公告)号： US11756994B2公开(公告)日： 2023-09-12
- 发明人: Toshiharu Marui , Tetsuya Hayashi , Keiichiro Numakura , Wei Ni , Ryota Tanaka , Keisuke Takemoto
- 申请人： NISSAN MOTOR CO., LTD. , RENAULT s.a.s.
- 申请人地址： JP Yokohama
- 专利权人： NISSAN MOTOR CO., LTD.,RENAULT S.A.S.
- 当前专利权人： NISSAN MOTOR CO., LTD.,RENAULT S.A.S.
- 当前专利权人地址： JP Yokohama; FR Boulogne-Billancourt
- 代理机构： Foley & Lardner LLP
- 分案原申请号： US17423966
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/04 ; H01L21/76 ; H01L21/761 ; H01L29/16
摘要：
A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.
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