Invention Grant
- Patent Title: Sacrificial redistribution layer in microelectronic assemblies having direct bonding
-
Application No.: US18053869Application Date: 2022-11-09
-
Publication No.: US11749628B2Publication Date: 2023-09-05
- Inventor: Adel A. Elsherbini , Veronica Aleman Strong , Shawna M. Lift , Brandon M. Rawlings , Jagat Shakya , Johanna M. Swan , David M. Craig , Jeremy Alan Streifer , Brennen Karl Mueller
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Akona IP
- The original application number of the division: US17122934 2020.12.15
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/18 ; B81B7/00

Abstract:
Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first microelectronic component having a first direct bonding region, wherein the first direct bonding region includes first metal contacts and a first dielectric material between adjacent ones of the first metal contacts; a second microelectronic component having a second direct bonding region, wherein the second direct bonding region includes second metal contacts and a second dielectric material between adjacent ones of the second metal contacts, wherein the first microelectronic component is coupled to the second microelectronic component by interconnects, and wherein the interconnects include individual first metal contacts coupled to respective individual second metal contacts; and a void between an individual first metal contact that is not coupled to a respective individual second metal contact, wherein the void is in the first direct bonding region.
Public/Granted literature
- US20230074970A1 SACRIFICIAL REDISTRIBUTION LAYER IN MICROELECTRONIC ASSEMBLIES HAVING DIRECT BONDING Public/Granted day:2023-03-09
Information query
IPC分类: