- 专利标题: Electrostatic discharge (ESD) protection circuit and chip
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申请号: US17412178申请日: 2021-08-25
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公开(公告)号: US11721974B2公开(公告)日: 2023-08-08
- 发明人: Qian Xu
- 申请人: CHANGXIN MEMORY TECHNOLOGIES, INC.
- 申请人地址: CN Hefei
- 专利权人: CHANGXIN MEMORY TECHNOLOGIES, INC.
- 当前专利权人: CHANGXIN MEMORY TECHNOLOGIES, INC.
- 当前专利权人地址: CN Hefei
- 代理机构: Kilpatrick Townsend & Stockton LLP
- 优先权: CN 2110004426.4 2021.01.04
- 主分类号: H02H9/04
- IPC分类号: H02H9/04
摘要:
Embodiments relate to an electrostatic discharge (ESD) protection circuit and a chip. The ESD protection circuit includes: an ESD protection module, arranged inside a protected chip and connected to a protected circuit; and a control module, connected to the ESD protection module and configured to output a low-level signal to the ESD protection module to trigger the ESD protection module to discharge an electrostatic current when an ESD event occurs in the protected chip, and output a high-level signal to the ESD protection module to reduce a static leakage current of the ESD protection module when the ESD event does not occur in the protected chip.
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