- 专利标题： Nonvolatile memory having multiple narrow tips at floating gate
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申请号： US17392269申请日： 2021-08-03
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公开(公告)号： US11721731B2公开(公告)日： 2023-08-08
- 发明人: Zar Lwin Zin , Shyue Seng Tan , Eng Huat Toh
- 申请人： GLOBALFOUNDRIES Singapore Pte. Ltd.
- 申请人地址： SG Singapore
- 专利权人： GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- 当前专利权人： GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- 当前专利权人地址： SG Singapore
- 代理商 David Cain
- 主分类号： H01L29/423
- IPC分类号： H01L29/423 ; G11C8/14 ; H01L29/08 ; H01L21/28 ; H01L29/788 ; H01L29/66 ; G11C16/14 ; H10B41/10
摘要：
A nonvolatile memory device is provided. The device comprises an active region, a floating gate over the active region and a wordline next to the floating gate. The floating gate has at least two narrow tips adjacent to the wordline and a portion of the floating gate between the narrow tips has a concave profile.
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