- 专利标题: Semiconductor processing chamber
-
申请号: US17017495申请日: 2020-09-10
-
公开(公告)号: US11715625B2公开(公告)日: 2023-08-01
- 发明人: Greg Toland , Kenneth D. Schatz , Laksheswar Kalita , Dmitry Lubomirsky
- 申请人: Applied Materials, Inc.
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Kilpatrick Townsend & Stockton LLP
- 主分类号: H01J37/32
- IPC分类号: H01J37/32 ; H01L21/67
摘要:
Exemplary semiconductor processing systems may include a pedestal configured to support a semiconductor substrate. The pedestal may be operable as a first plasma-generating electrode. The systems may include a lid plate defining a radial volume. The systems may include a faceplate supported with the lid plate. The faceplate may be operable as a second plasma-generating electrode. A plasma processing region may be defined between the pedestal and the faceplate within the radial volume defined by the faceplate. The faceplate may define a plurality of first apertures. The systems may include a showerhead positioned between the faceplate and the pedestal. The showerhead may define a plurality of second apertures comprising a greater number of apertures than the plurality of first apertures.
公开/授权文献
- US20210082665A1 SEMICONDUCTOR PROCESSING CHAMBER 公开/授权日:2021-03-18
信息查询