- 专利标题: Plasma processing apparatus
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申请号: US17086622申请日: 2020-11-02
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公开(公告)号: US11705308B2公开(公告)日: 2023-07-18
- 发明人: Shintaro Ikeda , Hidetoshi Hanaoka , Naoki Tamaru
- 申请人: Tokyo Electron Limited
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: IPUSA, PLLC
- 优先权: JP 19204977 2019.11.12
- 主分类号: H01J37/32
- IPC分类号: H01J37/32 ; H01J37/16
摘要:
There is provision of a plasma processing apparatus including a processing vessel, a first member provided in the processing vessel, and a second member provided outside the first member. In at least one of the first member and the second member, a gas flow passage is formed, and the gas flow passage is configured to cause a gas to flow into a gap between the first member and the second member.
公开/授权文献
- US20210142983A1 PLASMA PROCESSING APPARATUS 公开/授权日:2021-05-13
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