- 专利标题: Adaptively programming memory cells in different modes to optimize performance
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申请号: US17221412申请日: 2021-04-02
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公开(公告)号: US11664073B2公开(公告)日: 2023-05-30
- 发明人: Karthik Sarpatwari , Fabio Pellizzer , Nevil N. Gajera
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Greenberg Traurig
- 主分类号: G11C16/10
- IPC分类号: G11C16/10 ; G06N3/08 ; G06N3/04 ; G11C11/56 ; G06F11/10 ; G11C16/04
摘要:
Systems, methods and apparatus to determine, in response to a command to write data into a set of memory cells, a programming mode of a set of memory cell to optimize performance in retrieving the data back from the set of memory cells. For example, based on usages of a memory region containing the memory cell set, a predictive model can be used to identify a combination of an amount of redundant information to be stored into the memory cells in the set and a programming mode of the memory cells to store the redundant information. Increasing the amount of redundant information can increase error recovery capability but increase bit error rate and/or increase time to read. The predictive model is trained to predict the combination to optimize read performance.
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