- 专利标题: Multi-die memory device
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申请号: US17540950申请日: 2021-12-02
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公开(公告)号: US11657868B2公开(公告)日: 2023-05-23
- 发明人: Scott C. Best , Ming Li
- 申请人: Rambus Inc.
- 申请人地址: US CA San Jose
- 专利权人: Rambus Inc.
- 当前专利权人: Rambus Inc.
- 当前专利权人地址: US CA San Jose
- 代理机构: Peninsula Patent Group
- 代理商 Lance Kreisman
- 主分类号: G11C5/02
- IPC分类号: G11C5/02 ; G11C11/4093 ; G11C11/4096 ; G11C5/04 ; H01L25/065 ; H01L25/10 ; H01L25/18 ; H01L23/48 ; G11C11/406 ; H01L23/00
摘要:
A memory is disclosed that includes a logic die having first and second memory interface circuits. A first memory die is stacked with the logic die, and includes first and second memory arrays. The first memory array couples to the first memory interface circuit. The second memory array couples to the second interface circuit. A second memory die is stacked with the logic die and the first memory die. The second memory die includes third and fourth memory arrays. The third memory array couples to the first memory interface circuit. The fourth memory array couples to the second memory interface circuit. Accesses to the first and third memory arrays are carried out independently from accesses to the second and fourth memory arrays.
公开/授权文献
- US20220139446A1 MULTI-DIE MEMORY DEVICE 公开/授权日:2022-05-05
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